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HN624316N Series
High Speed and Burst (A0, A1 Burst) 1048576-word x 16-bit / 2097152-word x 8-bit CMOS Mask Programmable Read Only Memory
Description
The HN624316N is a 16-Mbit CMOS mask-programmable ROM organized either as 1048576 words by 16 bits or as 2097152 words by 8 bits. Realizing low power consumption, this memory is allowed for battery operation. And a high speed access of 120/150 ns is the most suitable to the system using a high speed microcomputer by 16 bits as 8086 and 68000 e.t.c..
Features
* * * * * Single +5 V power supply Normal access time: 120 ns/150 ns (max) Burst access time: 60 ns/70 ns (max) Low power consumption: 300 mW (typ) active 5 W (typ) standby Byte-wide or word-wide data organization with BHE
Ordering Information
Type No. HN624316NP-12 HN624316NP-15 HN624316NFB-12 HN624316NFB-15 Access Time 120 ns 150 ns 120 ns 150 ns Package 600 mil 42-pin plastic DIP (DP-42) 44-pin plastic SOP (FP-44D)
HN624316N Series
Block Diagram
(A0, A1) A0 to A19 CE BHE (A-1) *1 OE Note: 1. A-1 is least significant address. When BHE is 'low', D14 to D8 goes the high impedance state. BHE = VIH : 16-bit (D15 to D0) BHE = VIL : 8-bit (D7 to D0) Address buffer Memory array Burst docoder Hex/ Byte 3-state output buffer D0 to D15 /(D7)
Pin Arrangement
HN624316NP
A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE VSS OE D0 D8 D1 D9 D2 D10 D3 D11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BHE VSS D15/A-1 D7 D14 D6 D13 D5 D12 D4 VCC NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE VSS OE D0 D8 D1 D9 D2 D10 D3 D11
HN624316NFB
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 NC A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BHE VSS D15/A-1 D7 D14 D6 D13 D5 D12 D4 VCC
(Top view) (Top view)
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HN624316N Series
Absolute Maximum Ratings
Parameter Supply voltage All input and output voltage Operating temperature range Storage temperature range Temperature under bias Note: 1. With respect to V SS . Symbol VCC Vin, Vout Topr Tstg Tbias Value -0.3 to +7.0 Unit V C C C Note 1 1
-0.3 to VCC + 0.3 V 0 to +70 -55 to +125 -20 to +85
Recommended DC Operating Conditions (VSS = 0 V, Ta = 0 to +70C)
Parameter Supply voltage Input voltage Symbol VCC VIH VIL Min 4.5 2.2 -0.3 Typ 5.0 -- -- Max 5.5 VCC + 0.3 0.8 Unit V V V
DC Characteristics (VCC = 5 V 10%, VSS = 0 V, Ta = 0 to +70 C)
Parameter Supply current Active Symbol I CC Min -- Max 120/ 110 30 3 10 10 -- 0.4 Unit mA Test Conditions VCC = 5.5 V, I DOUT = 0 mA, t RC = 120 ns/150 ns VCC = 5.5 V, CE V CC - 0.2 V VCC = 5.5 V, CE 2.2 V VIN = 0 to VCC CE = 2.2 V, VOUT = 0 to VCC I OH = -205 A I OL = 1.6 mA
Standby Standby Input leakage current Output leakage current Output voltage
I SB1 I SB2 | IIL | | IOL | VOH VOL
-- -- -- -- 2.4 --
A mA A A V V
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HN624316N Series
Capacitance (VCC = 5 V 10%, VSS = 0 V, Ta = 25C, VIN = 0 V, f = 1 MHz)
Parameter Input capacitance Output capacitance Symbol Cin Cout Min -- -- Max 15 15 Unit pF pF
Note: This parameter is sampled and not 100% tested.
AC Electrical Characteristics (VCC = 5 V 10%, VSS = 0 V, Ta = 0 to +70C)
* * * * Output load: 1TTLgate + CL = 100 pF (including jig capacitance) Input pulse level: 0.45 to 2.4 V Input and output timing reference level: 1.5 V Input rise and fall time: 5 ns
HN624316N-12 Parameter Read cycle time Burst read cycle time Address access time Burst address access time CE access time OE access time BHE access time Output hold time from address change Output hold time from CE Output hold time from OE Output hold time from BHE CE to output in high-Z OE to output in high-Z BHE to output in high-Z CE to output in low-Z OE to output in low-Z BHE to output in low-Z Note: Symbol t RC t BC t AA t BA t ACE t OE t BHE t DHA t DHC t DHO t DHB t
*1 CHZ *1
HN624316N-15 Min 150 70 -- -- -- -- -- 0 0 0 0 -- -- -- 5 5 5 Max -- -- 150 70 150 70 150 -- -- -- -- 70 70 70 -- -- -- Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Min 120 60 -- -- -- -- -- 0 0 0 0 -- -- -- 5 5 5
Max -- -- 120 55 120 55 120 -- -- -- -- 40 40 40 -- -- --
t OHZ t BHZ t CLZ t OLZ t BLZ
*1
1. t CHZ, tOHZ and t BHZ are defined as the time at which the output achieves the open circuit conditions and are not referred to output voltage levels.
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HN624316N Series
Timing Waveforms
Word Mode (BHE = `VIH') or Byte Mode (BHE = `VIL')
t RC Address t AA CE t CLZ OE t OLZ Dout Valid data t OE t OHZ t DHO High-Z t ACE t CHZ t DHC t DHA
Notes: 1. tDHA, tDHC, tDHO: Determined by faster. 2. tAA, tACE, tOE: Determined by slower. 3. tCLZ, tOLZ: Determined by slower.
Word Mode, Byte Mode Switch
Address
High-Z t AA t DHA
High-Z
BHE t BHZ D7 to D0 t DHB D15 to D8 High-Z Valid data t BLZ Valid data t BHE Valid data
Notes: 1. CE and OE are enable A19 to A0 are valid. 2. D15/A-1 pin is in the output state when BHE is high, CE and OE are enable. Therefore, the input signals of opposite phase to the output must not be applied to them.
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HN624316N Series
Burst Mode
A2 to A18 t RC A0, A1, (A-1) tBA t DHA tAA t DHA Valid data
Valid data Valid data
tBC
tBC
t BC
t BA tDHA
tBA
t DHA
Valid data
Dout
Note: CE and OE are enable.
Power Up Sequence
4.5V V CC 0V t ACE CE t Address (A2 to A19) Valid data t AA Dout Valid data
t 0ns Notes: This device is used ATD (Address Transient Detector). Therefore, Transfer either CE or address (A2 to A19) after power up to 4.5 V.
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HN624316N Series
Package Dimensions
HN624316NP Series (DP-42)
Unit: mm
42
52.80 53.80 Max
22 15.0 Max 2.54 Min 5.06 Max 13.40
1
1.3 Max
1.20
21 15.24
0.51 Min
2.54 0.25
0.48 0.10
0.25 - 0.05 0 - 15
+ 0.26
HN624316NFB Series (FP-44D)
Unit: mm
28.50 28.70 Max 44 23 12.60 3.00 Max
1 1.02 Max
22
0.17 0.05
16.04 0.30 1.72
0.40 0.10
1.27 0.10 0.12 M
0.19 0.10
0 - 10 0.80 0.20
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